PART |
Description |
Maker |
BGA318 Q62702-G0043 |
From old datasheet system Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器(级0瓦,增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫) Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
RFMA7090-1W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
RFMA7090-0.5W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
RFMA5065-1W-Q7 |
5.0 - 6.5 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
RFMA5872-1W-Q7 |
5.8 - 7.2 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
RFMA1415-1W-Q7 |
14.4 - 15.4 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
ACA2784 |
1 GHz, 21 dB Gain High Output Power DoublerAmplifier
|
ANADIGICS, Inc
|
LD7263 |
14 GHz / 750 W CW / CONDUCTION COOLING / HIGH POWER GAIN 14 GHz, 750 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp. NEC[NEC]
|
BNT01 |
1.5 -3.0 GHz Wideband High Linearity LNA Gain Block
|
BeRex Corporation
|